FLOSFIA is a spin-off from KYOTO University, to commercialize the MISTDRY™ technology

 

FLOSFIA Inc., headquartered in Kyoto, Kyoto prefecture, Japan, is a spin-off from a research of Kyoto University, specializing in film-formation by mist chemical vapor deposition (CVD). Making use of physical properties of gallium oxide (Ga2O3), FLOSFIA has devoted to development of low-loss power devices. FLOSFIA succeeded in a development of a Schottky Barrier Diode (SBD) with the lowest specific on-resistance of any SBDs currently available on the market (through an internal investigation), realizing technologies linked to power loss reduction that is reduced up to 90 percent less than before. FLOSFIA will now develop its own production lines with a view to launching commercial production in 2018.FLOSFIA produces a variety of thin films, enhancing MISTDRY™ technology, achieving commercialization of power devices, and realizing application of its technology to electrode materials, oxide compounds with functional properties for electronic devices, plating and polymers. 

Learn more about FLOSFIA : Company Profile (PDF)

 

News

2021-3-26 FLOSFIA Inc. raises JPY 1 billion Series E Round
         Shaping a new future with Ultimate “SEMI ecologyTM” by GaOTM

FLOSFIA Inc. has announced that it has raised JPY 1 billion from several existing and new investors, and complete Series E Round. This round brings FLOSFIA’s total capital raised to approximately JPY 4.2 billion.

Attachment : Press Release (PDF)

2018-1-4   DENSO and Kyoto University Startup FLOSFIA will Develop Next-Gen Power Semiconductor Device for Electrified Vehicles

2018-7-13  Published our articles in Forbes and Bloomberg Online 

■Forbes – Japan’s Never-Give-Up Approach Has Made It A Standalone Leader In Creating Unique Materials
■Bloomberg – Japan’s commitment to problem-solving has made it a standalone leader in creating unique materials

2018-7-13  Ground breaking work on Gallium Oxide(Ga2O3)normally-off transistor
                     ~Paved a way for Gallium Oxide as standard material for power semiconductor~ 

FLOSFIA successfully demonstrated the world first α-Ga2O3 normally off MOSFET. This is a ground-breaking work since it has been considered challenging to realized normally off MOSFET for a long time. FLOSFIA plans to manufacture corundum α-Ga2O3 powe r devices, GaOTM series, starting from SBD in TO220 and then MOSFET.

Attachment : Press Release (PDF)

2018-1-4   DENSO and Kyoto University Startup FLOSFIA will Develop Next-Gen Power Semiconductor Device for Electrified Vehicles

DENSO Corporation, one of the world’s largest automotive suppliers, and FLOSFIA Inc., a tech startup spun from Kyoto University, are partnering to develop a next-generation power semiconductor device expected to reduce the energy loss, cost, size and weight of inverters used in electrified vehicles (EVs). Through the joint development project, the two companies aim to improve the efficiency of EV power control units, a key to drive widespread EV use, and usher in a future of safer, more sustainable mobility. In addition to the joint development partnership, DENSO has acquired new shares issued by FLOSFIA in its Series C funding round.

Attachment : Press Release (PDF)

2018-1-4   FLOSFIA Inc. raises JPY 800 Million Series C Round for Gallium Oxide Power Devices

FLOSFIA Inc. has announced that it has raised JPY 800 million from several existing and new investors including strategic ones. This round brings FLOSFIA’s total capital raised to approximately JPY 2.26 billion. FLOSFIA Inc. is aiming to commercialize Corundum Structured Gallium Oxide (α-Ga2O3) in order to revolutionize power electronics. FLOSFIA Inc. will use this capital to develop its own production lines and commence commercial production of the world’s first α-Ga2O3 power device in 2018.

Attachment : Press Release (PDF)

 

2017-4-6   FLOSFIA Inc. closes JPY 750 Million Series B Round for Gallium Oxide Power Devices

FLOSFIA Inc. has announced the JPY 100 million second closing of its Series B equity financing, bringing the total amount raised in this round to JPY 850 million. Eight Road Ventures Japan joins the existing investor syndicate who participated in the March closing. This round brings FLOSFIA’s total capital raised to approximately JPY 1.5 billion. FLOSFIA Inc. is aiming to commercialize Corundum Structured Gallium Oxide (α-Ga2O3) in order to revolutionize power electronics. FLOSFIA Inc. will use this capital to develop its own production lines and commence commercial production of the world’s first α-Ga2O3 power device in 2018.

Attachment : Press Release (PDF)

2017-3-2   FLOSFIA Inc. raises JPY 750 Million Series B Round for Gallium Oxide Power Devices

FLOSFIA Inc. has announced that it has raised JPY 750 million from several existing and new investors including strategic ones. FLOSFIA Inc. is aiming to commercialize Corundum Structured Gallium Oxide (α-Ga2O3) in order to revolutionize power electronics. FLOSFIA Inc. will use this capital to develop its own production lines and commence commercial production of the world’s first α-Ga2O3 power device in 2018.

Attachment : Press Release (PDF)

 

About Us

Company FLOSFIA Inc.
President Toshimi HITORA
Foundation March 31, 2011
Head Office 1-29 Goryo-Ohara, Nishikyo-ku, Kyoto
Capital
¥ 3,790 million(Including capital reserve)(As of September 1, 2020)
Business 1) Development and manufacture of devices using next-generation  semiconductor materials “gallium oxide” (GaO™ devices)
2) Development and manufacture of new electronic materials and industrial materials produced by MIST DRY™ method
Executive
Officers
President: Toshimi Hitora [CEO]
Director: Takashi Shinohe [CTO]
Director: Chinami Majima [CAO]
Outside Director: Yasuo Nishiguchi (Part-Time)
Outside Director: Naonori Kurokawa (Part-Time)
Outside Director: Satoshi Yamaguchi (Part-Time)
Full-Time Auditor: Kazuyuki Nishida
Outside Auditor: Hideki Tsuji (part-time)
Outside Auditor: Tatsuo Mori (part-time)

Contact

email


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