FLOSFIA is a spin-off from KYOTO University, to commercialize the MISTDRY™ technology

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2026-7-12　FLOSFIA Selected as Winner in the Environment Category at the UN WIPO 2026 Global Awards! ~ Selected as One of 11 Companies Worldwide from Over 1,300 Applications Across 126 Countries; IP-Driven “SEMI ecology™” Recognized ~

FLOSFIA Inc. is pleased to announce that it has been selected as a Winner in the Environment category at the 2026 WIPO Global Awards, organized by the World Intellectual Property Organization (WIPO), a specialized agency of the United Nations.
This year, the Awards received over 1,300 applications from 126 countries. FLOSFIA was selected as one of 11 winners after being named among 33 finalists. This marks the first time since the inaugural 2022 edition that a Japanese company has received the award. The 11 winners were announced on July 10, 2026, at an awards ceremony held at WIPO headquarters in Geneva, Switzerland, during the WIPO Assemblies.
In WIPO’s official presentation, FLOSFIA’s gallium oxide power semiconductor technology was highlighted for reducing power loss, enabling lower-cost and cleaner manufacturing, and disseminating technology through intellectual property licensing.

■About the WIPO Global Awards
The WIPO Global Awards recognize small and medium-sized enterprises and startups that use intellectual property (IP) to drive business growth and contribute to solving social challenges. Organized by WIPO as part of its mission to make IP work for everyone, the Awards are judged by an international jury based on criteria including commercial potential, IP strategy, IP culture within the company, and social impact.
FLOSFIA’s selection as a Winner reflects global recognition not only of its energy-saving semiconductor technology, but also of its efforts to use intellectual property and partnerships to promote the commercialization and dissemination of its technology. Winners receive a dedicated workshop, six months of individualized mentorship, and recognition at the awards ceremony in Geneva.

■Toward the Realization of SEMI ecology™
FLOSFIA’s vision of SEMI ecology™ aims to reduce environmental impact across the semiconductor life cycle, from power loss during use to losses associated with manufacturing processes, materials, and resources. Centered on GaO™ power devices and FLOSFIA’s proprietary MISTDRY™ deposition technology, the company seeks to reduce environmental impact from semiconductor use, manufacturing, and resource utilization.
With this award as a new milestone, FLOSFIA will accelerate collaborations and alliances with companies in Japan and overseas that share its vision for SEMI ecology™. FLOSFIA welcomes partnerships tailored to each company’s business needs, including intellectual property licensing, joint development, and the supply of epitaxial wafers.

■Comment from Marcelo Di Pietro Peralta, Director of the WIPO Global Awards
WIPO Global Award winning companies show how strategic use of intellectual property can promote better business results: more visibility for stronger valuations, stronger basis for new partnerships, important protection in new markets. We are proud to celebrate WGA winners today, and even more eager to support them as they continue their journey. For us, this ceremony is not the finish line. It is the starting point.

■Comment from Toshimi Hitora, Founder and Chairman of FLOSFIA
We are deeply honored to have been selected as a Winner of the WIPO Global Awards.
FLOSFIA has placed intellectual property at the core of its business and has used it across research and development, business development, and partnerships. This award is the result of the efforts of our IP members, as well as the many partners who have supported FLOSFIA.
We will take this award as a new starting point and continue working with partners in Japan and overseas to promote GaO™ power devices, realize SEMI ecology™, and contribute to a sustainable society.

■Official WIPO Videos
Flosfia – Environment Startup – Japan
WIPO official video: Flosfia – Environment Startup – Japan

Highlights from the 2026 WIPO Global Awards Ceremony
Watch on YouTube (WIPO official channel)

■Related Links
WIPO 2026 Global Awards Winners: WIPO announces 11 winners
WIPO Global Awards 2026: FLOSFIA profile and winners list

2026-5-20　Selected as a Finalist for the 2026 WIPO Global Awards ~ Innovation Driven by an IP-Centered Strategy Recognized Internationally by UN WIPO ~

FLOSFIA is pleased to announce that it has been selected as a finalist of the 2026 WIPO Global Awards, organized by the World Intellectual Property Organization (WIPO), a specialized agency of the United Nations.
The WIPO Global Awards is the official international recognition program of WIPO, honoring SMEs, startups and university spin-outs that place intellectual property (IP) strategy at the core of their business growth and translate innovation and creativity into tangible solutions that benefit society. Established in 2022, the 2026 edition marks the fifth iteration of the program. Open to applicants from WIPO’s 194 Member States, this year’s edition attracted more than 1,300 applications from 126 countries, and FLOSFIA has been selected as one of the 33 companies advancing to the final round of evaluation.
Finalists are selected through a rigorous evaluation conducted by an independent international jury, based on the following four criteria:
　－Business Case and IP Portfolio
　－IP Commercialization Strategy
　－IP Culture within the Company
　－Impact for a Better Society
FLOSFIA has been advancing the commercialization of next-generation GaO™ power devices — power semiconductors that simultaneously deliver low loss, high breakdown voltage and low cost — built on a novel material first developed at Kyoto University, α-type gallium oxide (α-Ga₂O₃), together with its proprietary MIST DRY™ thin-film deposition technology. These technologies are systematically protected by a portfolio of patents, trademarks, designs and other IP rights in Japan and overseas, built up through a continuous IP strategy maintained since the company’s founding. We believe that this recognition by WIPO reflects the cumulative results of R&D and business development driven by these IP assets, together with ongoing efforts toward mass production and real-world deployment carried out in collaboration with multiple operating companies.
The 11 Winners will be unveiled at the WIPO Global Awards Ceremony held during the WIPO Assemblies at WIPO Headquarters in Geneva, Switzerland, on Friday, July 10, 2026.

■ Related Link
2026 WIPO Global Awards — Finalists (official): https://www.wipo.int/en/web/awards/global/2026

2023-3-15　FLOSFIA and JSR progress toward practical use of the world’s first P-type semiconductor, Iridium Gallium Oxide

FLOSFIA Inc. (FLOSFIA) and JSR Corporation (JSR) announced today they have jointly developed a new iridium-based film deposition material as a solution for mass production of iridium gallium oxide (alpha-(IrGa)₂O₃). This is the world’s first P-type power semiconductor developed by FLOSFIA for use in combination with corundum-type gallium oxide (alpha-Ga₂O₃). The use of this material allows for mass production in industrial applications as well as the expression of P-type characteristics, which is the most important characteristic of iridium gallium oxide.

Attachment : Press Release (PDF)

2023-1-18　FLOSFIA Inc. has solved a long-standing challenge on Gallium Oxide “P-type semiconductor^” 

FLOSFIA successfully demonstrated leakage current suppression by the junction barrier effect . FLOSFIA has applied the JBS structure , which is used in State-of-the-art Silicon Carbide (SiC) Diode, and successfully grown the Iridium Gallium Oxide [α-(IrGa)₂O₃] thin layer as an embedded P-type semiconductor.

Attachment : Press Release (PDF)

2021-3-26　FLOSFIA Inc. raises JPY 1 billion Series E Round
　　　　　　　  Shaping a new future with Ultimate “SEMI ecology^TM” by GaO^TM

FLOSFIA Inc. has announced that it has raised JPY 1 billion from several existing and new investors, and complete Series E Round. This round brings FLOSFIA’s total capital raised to approximately JPY 4.2 billion.

Attachment : Press Release (PDF)

2018-1-4   DENSO and Kyoto University Startup FLOSFIA will Develop Next-Gen Power Semiconductor Device for Electrified Vehicles

2018-7-13  Published our articles in Forbes and Bloomberg Online 

■Forbes – Japan’s Never-Give-Up Approach Has Made It A Standalone Leader In Creating Unique Materials
■Bloomberg – Japan’s commitment to problem-solving has made it a standalone leader in creating unique materials

2018-7-13  Ground breaking work on Gallium Oxide（Ga₂O₃）normally-off transistor
                     ～Paved a way for Gallium Oxide as standard material for power semiconductor～ 

FLOSFIA successfully demonstrated the world first α-Ga₂O₃ normally off MOSFET. This is a ground-breaking work since it has been considered challenging to realized normally off MOSFET for a long time. FLOSFIA plans to manufacture corundum α-Ga₂O₃ powe r devices, GaO^TM series, starting from SBD in TO220 and then MOSFET.

Attachment : Press Release (PDF)

2018-1-4   DENSO and Kyoto University Startup FLOSFIA will Develop Next-Gen Power Semiconductor Device for Electrified Vehicles

DENSO Corporation, one of the world’s largest automotive suppliers, and FLOSFIA Inc., a tech startup spun from Kyoto University, are partnering to develop a next-generation power semiconductor device expected to reduce the energy loss, cost, size and weight of inverters used in electrified vehicles (EVs). Through the joint development project, the two companies aim to improve the efficiency of EV power control units, a key to drive widespread EV use, and usher in a future of safer, more sustainable mobility. In addition to the joint development partnership, DENSO has acquired new shares issued by FLOSFIA in its Series C funding round.

Attachment : Press Release (PDF)

2018-1-4   FLOSFIA Inc. raises JPY 800 Million Series C Round for Gallium Oxide Power Devices

FLOSFIA Inc. has announced that it has raised JPY 800 million from several existing and new investors including strategic ones. This round brings FLOSFIA’s total capital raised to approximately JPY 2.26 billion. FLOSFIA Inc. is aiming to commercialize Corundum Structured Gallium Oxide (α-Ga₂O₃) in order to revolutionize power electronics. FLOSFIA Inc. will use this capital to develop its own production lines and commence commercial production of the world’s first α-Ga₂O₃ power device in 2018.

Attachment : Press Release (PDF)

 

2017-4-6   FLOSFIA Inc. closes JPY 750 Million Series B Round for Gallium Oxide Power Devices

FLOSFIA Inc. has announced the JPY 100 million second closing of its Series B equity financing, bringing the total amount raised in this round to JPY 850 million. Eight Road Ventures Japan joins the existing investor syndicate who participated in the March closing. This round brings FLOSFIA’s total capital raised to approximately JPY 1.5 billion. FLOSFIA Inc. is aiming to commercialize Corundum Structured Gallium Oxide (α-Ga₂O₃) in order to revolutionize power electronics. FLOSFIA Inc. will use this capital to develop its own production lines and commence commercial production of the world’s first α-Ga₂O₃ power device in 2018.

Attachment : Press Release (PDF)

2017-3-2   FLOSFIA Inc. raises JPY 750 Million Series B Round for Gallium Oxide Power Devices

FLOSFIA Inc. has announced that it has raised JPY 750 million from several existing and new investors including strategic ones. FLOSFIA Inc. is aiming to commercialize Corundum Structured Gallium Oxide (α-Ga₂O₃) in order to revolutionize power electronics. FLOSFIA Inc. will use this capital to develop its own production lines and commence commercial production of the world’s first α-Ga₂O₃ power device in 2018.

Attachment : Press Release (PDF)

 

About Us

Company	FLOSFIA Inc.
President	Toshimi HITORA
Foundation	March 31, 2011
Head Office	1-29 Goryo-Ohara, Nishikyo-ku, Kyoto
Capital	¥ 4,080 million(Including capital reserve)(As of January 1, 2023)
Business	1) Development and manufacture of devices using next-generation  semiconductor materials “gallium oxide” (GaO™ devices) 2) Development and manufacture of new electronic materials and industrial materials produced by MIST DRY™ method
Executive Officers	President: Toshimi Hitora [CEO] Director: Chinami Majima [CFO] Director: Takashi Shinohe [CSO] Outside Director: Yasuo Nishiguchi (Part-Time) Outside Director: Satoshi Yamaguchi (Part-Time) Outside Director: David Milstein (Part-Time) Full-Time Auditor: Koji Fujii Outside Auditor: Masamichi Nakamura (part-time) Outside Auditor: Yoshinori Tsutsui (part-time)

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