¥ 4,080 million(Including capital reserve)(As of January 1, 2023)
FLOSFIA is a spin-off from KYOTO University, to commercialize the MISTDRY™ technology
FLOSFIA Inc., headquartered in Kyoto, Kyoto prefecture, Japan, is a spin-off from a research of Kyoto University, specializing in film-formation by mist chemical vapor deposition (CVD). Making use of physical properties of gallium oxide (Ga2O3), FLOSFIA has devoted to development of low-loss power devices. FLOSFIA succeeded in a development of a Schottky Barrier Diode (SBD) with the lowest specific on-resistance of any SBDs currently available on the market (through an internal investigation), realizing technologies linked to power loss reduction that is reduced up to 90 percent less than before. FLOSFIA will now develop its own production lines with a view to launching commercial production in 2018.FLOSFIA produces a variety of thin films, enhancing MISTDRY™ technology, achieving commercialization of power devices, and realizing application of its technology to electrode materials, oxide compounds with functional properties for electronic devices, plating and polymers.
Learn more about FLOSFIA : Company Profile (PDF)
News
2023-3-15 FLOSFIA and JSR progress toward practical use of the world’s first P-type semiconductor, Iridium Gallium Oxide
FLOSFIA Inc. (FLOSFIA) and JSR Corporation (JSR) announced today they have jointly developed a new iridium-based film deposition material as a solution for mass production of iridium gallium oxide (alpha-(IrGa)2O3). This is the world’s first P-type power semiconductor developed by FLOSFIA for use in combination with corundum-type gallium oxide (alpha-Ga2O3). The use of this material allows for mass production in industrial applications as well as the expression of P-type characteristics, which is the most important characteristic of iridium gallium oxide.
Attachment : Press Release (PDF)
2023-1-18 FLOSFIA Inc. has solved a long-standing challenge on Gallium Oxide “P-type semiconductor”
FLOSFIA successfully demonstrated leakage current suppression by the junction barrier effect . FLOSFIA has applied the JBS structure , which is used in State-of-the-art Silicon Carbide (SiC) Diode, and successfully grown the Iridium Gallium Oxide [α-(IrGa)2O3] thin layer as an embedded P-type semiconductor.
Attachment : Press Release (PDF)
2021-3-26 FLOSFIA Inc. raises JPY 1 billion Series E Round
Shaping a new future with Ultimate “SEMI ecologyTM” by GaOTM
FLOSFIA Inc. has announced that it has raised JPY 1 billion from several existing and new investors, and complete Series E Round. This round brings FLOSFIA’s total capital raised to approximately JPY 4.2 billion.
Attachment : Press Release (PDF)
2018-1-4 DENSO and Kyoto University Startup FLOSFIA will Develop Next-Gen Power Semiconductor Device for Electrified Vehicles
2018-7-13 Published our articles in Forbes and Bloomberg Online
■Forbes – Japan’s Never-Give-Up Approach Has Made It A Standalone Leader In Creating Unique Materials
■Bloomberg – Japan’s commitment to problem-solving has made it a standalone leader in creating unique materials
2018-7-13 Ground breaking work on Gallium Oxide（Ga2O3）normally-off transistor
～Paved a way for Gallium Oxide as standard material for power semiconductor～
FLOSFIA successfully demonstrated the world first α-Ga2O3 normally off MOSFET. This is a ground-breaking work since it has been considered challenging to realized normally off MOSFET for a long time. FLOSFIA plans to manufacture corundum α-Ga2O3 powe r devices, GaOTM series, starting from SBD in TO220 and then MOSFET.
Attachment : Press Release (PDF)
2018-1-4 DENSO and Kyoto University Startup FLOSFIA will Develop Next-Gen Power Semiconductor Device for Electrified Vehicles
DENSO Corporation, one of the world’s largest automotive suppliers, and FLOSFIA Inc., a tech startup spun from Kyoto University, are partnering to develop a next-generation power semiconductor device expected to reduce the energy loss, cost, size and weight of inverters used in electrified vehicles (EVs). Through the joint development project, the two companies aim to improve the efficiency of EV power control units, a key to drive widespread EV use, and usher in a future of safer, more sustainable mobility. In addition to the joint development partnership, DENSO has acquired new shares issued by FLOSFIA in its Series C funding round.
Attachment : Press Release (PDF)
2018-1-4 FLOSFIA Inc. raises JPY 800 Million Series C Round for Gallium Oxide Power Devices
FLOSFIA Inc. has announced that it has raised JPY 800 million from several existing and new investors including strategic ones. This round brings FLOSFIA’s total capital raised to approximately JPY 2.26 billion. FLOSFIA Inc. is aiming to commercialize Corundum Structured Gallium Oxide (α-Ga2O3) in order to revolutionize power electronics. FLOSFIA Inc. will use this capital to develop its own production lines and commence commercial production of the world’s first α-Ga2O3 power device in 2018.
Attachment : Press Release (PDF)
2017-4-6 FLOSFIA Inc. closes JPY 750 Million Series B Round for Gallium Oxide Power Devices
FLOSFIA Inc. has announced the JPY 100 million second closing of its Series B equity financing, bringing the total amount raised in this round to JPY 850 million. Eight Road Ventures Japan joins the existing investor syndicate who participated in the March closing. This round brings FLOSFIA’s total capital raised to approximately JPY 1.5 billion. FLOSFIA Inc. is aiming to commercialize Corundum Structured Gallium Oxide (α-Ga2O3) in order to revolutionize power electronics. FLOSFIA Inc. will use this capital to develop its own production lines and commence commercial production of the world’s first α-Ga2O3 power device in 2018.
Attachment : Press Release (PDF)
2017-3-2 FLOSFIA Inc. raises JPY 750 Million Series B Round for Gallium Oxide Power Devices
FLOSFIA Inc. has announced that it has raised JPY 750 million from several existing and new investors including strategic ones. FLOSFIA Inc. is aiming to commercialize Corundum Structured Gallium Oxide (α-Ga2O3) in order to revolutionize power electronics. FLOSFIA Inc. will use this capital to develop its own production lines and commence commercial production of the world’s first α-Ga2O3 power device in 2018.
Attachment : Press Release (PDF)
About Us
| Company | FLOSFIA Inc. |
|---|---|
| President | Toshimi HITORA |
| Foundation | March 31, 2011 |
| Head Office | 1-29 Goryo-Ohara, Nishikyo-ku, Kyoto |
| Capital |
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| Business | 1) Development and manufacture of devices using next-generation semiconductor materials “gallium oxide” (GaO™ devices) 2) Development and manufacture of new electronic materials and industrial materials produced by MIST DRY™ method |
| Executive Officers |
President: Toshimi Hitora [CEO] |
Contact
